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- What are the characteristics of tungsten and tungsten alloy sintering furnaces
- What is the purpose of the degreasing sintering integrated furnace
- What are the high-temperature characteristics of ultra-high temperature sintering furnaces
- Brief Introduction to Transparent Ceramic Sintering Furnace
- What is a degreasing sintering integrated furnace
- Suzhou Meiteng Furnace Industry Co., Ltd
- Tel: 13606236737 (Manager Li)
- Wechat: szamc1997
- Address: No. 2 Fuli Road, Xinzhuang Town, Changshu City
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What is a degreasing sintering integrated furnace
2025-06-05The degreasing and sintering integrated furnace is an equipment used for material processing, mainly in the fields of metal powder injection molding (MIM), powder metallurgy, ceramics, etc. It can achieve two production processes of degreasing and sintering in the same furnace. Here is the relevant introduction:
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What are the advantages of AMB precision brazing furnace
2025-05-07The AMB precision brazing furnace has multiple advantages, mainly reflected in the following points: 1. Excellent vacuum environment: Adopting a multi-stage pumping system, high vacuum degree can be achieved, and the maximum vacuum degree can usually reach around 10 ?? Pa. In such a high vacuum environment, the oxidation pollution of active gases such as oxygen and nitrogen on the brazing materia
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What is the function of a single crystal growth furnace
2025-04-15A single crystal growth furnace is an equipment used for growing single crystals, which plays a crucial role in various fields such as semiconductors, optics, electronics, etc. It mainly includes the following aspects: 1. Preparation of semiconductor materials: In the semiconductor industry, single crystal silicon is a key material for manufacturing integrated circuit chips. By correctly controll
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What are the characteristics of single crystal growth furnaces
2025-01-03The single crystal growth furnace has the following characteristics: 1. Proper control aspect Correct temperature: able to control the temperature within a very accurate range, for example, when growing silicon single crystals by direct pull method, the polycrystalline silicon raw material in the quartz crucible should be heated to above 1450 ℃ and kept stable. The accuracy of temperature
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